d a t a sh eet BF1212; BF1212r; BF1212wr product specification 1 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
features short channel transistor with high forward transfer admittance to input capacitance ratio low noise gain controlled amplifier excellent low frequency noise performance partly internal self-biasing circuit to ensure good cross-modulation performance during agc and good dc stabilization. applications gain controlled low noise vhf and uhf amplifiers for 5 v digital and analog television tuner applications. description enhancement type n-channel field-effect transistor with source and substrate interconnected. integrated diodes between gates and source protect against excessive input voltage surges. the BF1212, BF1212r and BF1212wr are encapsulated in the sot143b, sot143r and sot343r plastic packages respectively. pinning pin description 1 source 2 drain 3 gate 2 4 gate 1 handbook, 2 columns top view msb014 12 3 4 fig.1 simplified outline (sot143b). BF1212; marking code: lgp handbook, 2 columns top view msb035 1 2 4 3 fig.2 simplified outline (sot143r). BF1212r; marking code: lkp handbook, halfpage top view msb842 21 4 3 fig.3 simplified outline (sot343r). BF1212wr; marking code: ml quick reference data symbol parameter conditions min. typ. max. unit v ds drain-source voltage -- 6v i d drain current -- 30 ma p tot total power dissipation -- 180 mw ? y fs ? forward transfer admittance 28 33 43 ms c ig1-ss input capacitance at gate 1 - 1.7 2.2 pf c rss reverse transfer capacitance f = 1 mhz - 15 30 ff f noise ?gure f = 800 mhz - 1.1 1.8 db x mod cross-modulation input level for k = 1 % at 40 db agc 100 104 - db m v t j junction temperature -- 150 c product specification BF1212; BF1212r; BF1212wr 2 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
ordering information limiting values in accordance with the absolute maximum rating system (iec 60134). note 1. t s is the temperature of the soldering point of the source lead. thermal characteristics caution this product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. for further information, refer to ty specs.: snw-eq-608, snw-fq-302a and snw-fq-302b. type number package name description version BF1212 - plastic surface mounted package; 4 leads sot143b BF1212r - plastic surface mounted package; reverse pinning; 4 leads sot143r BF1212wr - plastic surface mounted package; reverse pinning; 4 leads sot343r symbol parameter conditions min. max. unit v ds drain-source voltage - 6v i d drain current (dc) - 30 ma i g1 gate 1 current - 10 ma i g2 gate 2 current - 10 ma p tot total power dissipation BF1212; BF1212r t s 116 c; note 1 - 180 mw BF1212wr t s 122 c; note 1 - 180 mw t stg storage temperature - 65 +150 c t j junction temperature - 150 c symbol parameter value unit r th j-s thermal resistance from junction to soldering point BF1212; BF1212r 185 k/w BF1212wr 155 k/w product specification BF1212; BF1212r; BF1212wr 3 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
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